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The historical development of the Czochralski methodUECKER, Reinhard.Journal of crystal growth. 2014, Vol 401, pp 7-24, issn 0022-0248, 18 p.Conference Paper

Electron-beam-induced current and photoetching investigations of dislocations and impurity atmospheres in n-type liquid-encapsulated Czochralski GaAsFRIGERI, C; WEYHER, J. L.Journal of applied physics. 1989, Vol 65, Num 12, pp 4646-4653, issn 0021-8979, 8 p.Article

Nonlinear model-based control of the Czochralski process II: Reconstruction of crystal radius and growth rate from the weighing signalWINKLER, J; NEUBERT, M; RUDOLPH, J et al.Journal of crystal growth. 2010, Vol 312, Num 7, pp 1019-1028, issn 0022-0248, 10 p.Article

Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growthZHANG ZHICHENG; REN BINGYAN; CHEN YONGHAIA et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 504-509, issn 0167-9317, 6 p.Conference Paper

Comportement de la vitesse de cristallisation lors de fluctuations de la température du bain fondu dans la méthode de CzochralskiAMYAN, A. L; NALBANDYAN, O. G.Fizika i himiâ obrabotki materialov. 1983, Num 1, pp 73-77, issn 0015-3214Article

A new hybrid method for the global modeling of convection in CZ crystal growth configurationsFAINBERG, J; VIZMAN, D; FRIEDRICH, J et al.Journal of crystal growth. 2007, Vol 303, Num 1, pp 124-134, issn 0022-0248, 11 p.Conference Paper

A NEW DESIGN FOR WATER COOLED CZOCHRALSKI SEED HOLDERSINGH AJ.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 51; NO 3; PP. 635-636; BIBL. 4 REF.Article

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Radiation view factors in Czochralski crystal growth apparatus for short crystalsSRIVASTAVA, R. K; RAMACHANDRAN, P. A; DUDUKOVIC, M. P et al.Journal of crystal growth. 1986, Vol 74, Num 2, pp 281-291, issn 0022-0248Article

Precise evaluation of oxygen measurements on CZ-silicon wafersGRAFF, K.Journal of the Electrochemical Society. 1983, Vol 130, Num 6, pp 1378-1381, issn 0013-4651Article

Contrôle du processus de croissance des cristaux par la méthode de Czochralski en modifiant la vitesse du tirageNALBANDYAN, O. G.Kristallografiâ. 1984, Vol 29, Num 3, pp 620-621, issn 0023-4761Article

Conditions of existence and character of the temperature fluctuations during Czochralski growth of oxide single crystalsILIEV, K; BERKOWSKI, M; NIKOLOV, V et al.Journal of crystal growth. 1991, Vol 108, Num 1-2, pp 219-224, issn 0022-0248Article

A new design for a UHV compatible Czochralski crystal growth systemBROWN, S. A; HOWARD, B. K; BROWN, S. V et al.Review of scientific instruments. 1990, Vol 61, Num 9, pp 2427-2429, issn 0034-6748Article

Contraintes thermoélastiques dans les cristaux obtenus par la méthode de CzochralskiTIMAN, B. L; FESENKO, V. M.Fizika i himiâ obrabotki materialov. 1984, Num 5, pp 19-22, issn 0015-3214Article

Dislocation density control in high-purity germanium crystal growthGUOJIAN WANG; YUTONG GUAN; HAO MEI et al.Journal of crystal growth. 2014, Vol 393, pp 54-58, issn 0022-0248, 5 p.Conference Paper

Combined-convection segregation coefficient and related Nusselt numbersOSTROGORSKY, A. G.Journal of crystal growth. 2013, Vol 380, pp 43-50, issn 0022-0248, 8 p.Article

Large size single crystal growth of Lu₃Al₅O₁₂:Pr and their uniformity of scintillation propertiesKAMADA, Kei; YANAGIDA, Takayuki; ENDO, Takanori et al.Journal of crystal growth. 2012, Vol 352, Num 1, pp 91-94, issn 0022-0248, 4 p.Conference Paper

Crystal growth of PbWO₄:Nd³⁺ and PbMoO₄:Nd³⁺ crystals and their characterization by means of optical and dielectric relaxation spectroscopyGOROBETS, Yu. N; KOSMYNA, M. B; LUCHECHKO, A. P et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 687-690, issn 0022-0248, 4 p.Conference Paper

Impact of Lu/Gd ratio and activator concentration on structure and scintillation properties of LGSO:Ce crystalsSIDLETSKIY, O; BONDAR, V; ZELENSKAYA, O et al.Journal of crystal growth. 2010, Vol 312, Num 4, pp 601-606, issn 0022-0248, 6 p.Article

Effects of RF coil position on the transport processes during the stages of sapphire Czochralski crystal growthLU, Chung-Wei; CHEN, Jyh-Chen; CHEN, Chien-Hung et al.Journal of crystal growth. 2010, Vol 312, Num 8, pp 1074-1079, issn 0022-0248, 6 p.Conference Paper

Influence of coil geometry on the induction heating process in crystal growth systemsTAVAKOLI, M. H; OJAGHI, A; MOHAMMADI-MANESH, E et al.Journal of crystal growth. 2009, Vol 311, Num 6, pp 1594-1599, issn 0022-0248, 6 p.Article

Three-dimensional stability calculations for hydrodynamic model of Czochralski growthGELFGAT, A. Yu.Journal of crystal growth. 2007, Vol 303, Num 1, pp 226-230, issn 0022-0248, 5 p.Conference Paper

Crystal growth and oxygen precipitation behavior of 300 mm nitrogen-doped Czochralski siliconDAXI TIAN; DEREN YANG; XIANGYANG MA et al.Journal of crystal growth. 2006, Vol 292, Num 2, pp 257-259, issn 0022-0248, 3 p.Article